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this is information on a product in full production. november 2013 docid025283 rev 1 1/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd n-channel 600 v, 0.145 typ., 21 a, fdmesh? ii power mosfets in d2pak, to-220fp, to-220 and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? extremely high dv/dt and avalanche capabilities applications ? switching applications description these fdmesh? ii power mosfets with intrinsic fast-recovery body diode are produced using the second generation of mdmesh? technology. utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. they are ideal for bridge topologies and zvs phase-shift converters. to-220 d pak 2 to-220fp to-247 1 2 3 1 2 3 1 3 tab 1 2 3 tab !-v '7$% * 6 order codes v ds @ t jmax r ds(on) max i d STB26NM60ND 650 v 0.175 21 a stf26nm60nd stp26nm60nd stw26nm60nd table 1. device summary order codes marking packages packaging STB26NM60ND 26nm60nd d2pak tape and reel stf26nm60nd to-220fp tube stp26nm60nd to-220 stw26nm60nd to-247 www.st.com
contents STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 2/23 docid025283 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
docid025283 rev 1 3/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd electrical ratings 23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak, to-220, to-247 to-220fp v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 21 21 (1) 1. limited only by maximum temperature allowed a i d drain current (continuous) at t c = 100 c 13 13 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 84 84(1) a p tot total dissipation at t c = 25 c 190 35 w dv/dt (3) 3. i sd 21 a, di/dt 400 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 40 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 40 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d2pak to-220fp to-220 to-247 r thj-case thermal resistance junction- case max 0.66 3.57 0.66 c/w r thj-amb thermal resistance junction- ambient max 62.5 50 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction- pcb max 30 c/w
electrical ratings STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 4/23 docid025283 rev 1 table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 100 mj
docid025283 rev 1 5/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd electrical characteristics 23 2 electrical characteristics (t case =25 c unless otherwise specified). table 5. on/off states symbol parameter test conditions value unit min. typ. max. v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v @t c = 125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 10.5 a 0.145 0.175 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1817 - pf c oss output capacitance - 90 - pf c rss reverse transfer capacitance -4.4- pf c oss eq. (1) 1. c oss eq . is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 270 - pf t d(on) turn-on delay time v dd = 300 v, i d = 10.5 a r g =4.7 v gs = 10 v (see figure 23) , (see figure 18) -22- ns t r rise time - 14.5 - ns t d(off) turn-off delay time - 69 - ns t f fall time - 27.5 - ns q g total gate charge v dd = 480 v, i d = 21 a, v gs = 10 v, (see figure 19) -54.6- nc q gs gate-source charge - 9.1 - nc q gd gate-drain charge - 32.5 - nc r g intrinsic gate resistance f = 1 mhz, i d = 0 - 2.5 -
electrical characteristics STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 6/23 docid025283 rev 1 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 21 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 84 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 21 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 21 a, v dd = 60 v di/dt=100 a/s (see figure 20) - 170 ns q rr reverse recovery charge - 1.39 c i rrm reverse recovery current - 14 a t rr reverse recovery time i sd = 21 a,v dd = 60 v di/dt=100 a/s, t j = 150 c (see figure 20) - 230 ns q rr reverse recovery charge - 2.24 c i rrm reverse recovery current - 18 a
docid025283 rev 1 7/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd electrical characteristics 23 2.1 electrical characteristics (curves) figure 2. safe operating area for d2pak and to-220 figure 3. thermal impedance for d2pak and to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15518v1 i d 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 am16149v1 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15519v1
electrical characteristics STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 8/23 docid025283 rev 1 figure 8. output characteristics figure 9. transfer characteristics figure 10. static drain-source on-resistance figure 11. gate charge vs gate-source voltage figure 12. capacitance variations figure 13. normalized gate threshold voltage vs temperature i d 50 30 10 0 0 5 v ds (v) 10 (a) 15 5v 6v v gs =9, 10v 20 40 20 7v 8v am16017v1 i d 50 30 10 0 0 4 v gs (v) 8 (a) 2 6 10 20 40 v ds =18v am16018v1 r ds(on) 0.140 0.138 0.136 0 4 i d (a) ( ) 2 6 0.142 v gs =10v 8 10 0.144 0.146 0.148 12 14 16 0.150 am16019v1 v gs 6 4 2 0 0 20 q g (nc) (v) 60 8 30 40 10 v dd =480v i d =21a 12 300 200 100 0 400 500 v ds 10 50 v ds (v) am16020v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 10000 am16021v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a am16034v1
docid025283 rev 1 9/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd electrical characteristics 23 figure 14. normalized on-resistance vs temperature figure 15. source-drain diode forward characteristics figure 16. normalized v ds vs temperature figure 17. output capacitance stored energy r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 i = 10.5 a d v = 10 v gs am16035v1 v sd 0 4 i sd (a) (v) 2 6 8 0 0.2 0.4 0.6 0.8 1 1.0 t j =-50c t j =150c t j =25c 10 12 14 16 18 1.2 am16037v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.91 0.93 0.95 0.97 0.99 1.03 1.05 1.01 i d = 1ma 1.07 1.09 am10636v1 e oss 2 1 0 0 100 v ds (v) (j) 400 3 200 300 4 500 600 5 6 7 8 9 10 am16033v1
test circuits STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 10/23 docid025283 rev 1 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid025283 rev 1 11/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd package mechanical data 23 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 12/23 docid025283 rev 1 table 8. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
docid025283 rev 1 13/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd package mechanical data 23 figure 24. d2pak (to-263) drawing figure 25. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
package mechanical data STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 14/23 docid025283 rev 1 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid025283 rev 1 15/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd package mechanical data 23 figure 26. to-220fp drawing 7012510_rev_k_b
package mechanical data STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 16/23 docid025283 rev 1 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid025283 rev 1 17/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd package mechanical data 23 figure 27. to-220 type a drawing ?type!?2ev?4
package mechanical data STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 18/23 docid025283 rev 1 table 11. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid025283 rev 1 19/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd package mechanical data 23 figure 28. to-247 drawing 0075325_g
packing mechanical data STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 20/23 docid025283 rev 1 5 packing mechanical data table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
docid025283 rev 1 21/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd packing mechanical data 23 figure 29. tape figure 30. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 22/23 docid025283 rev 1 6 revision history table 13. document revision history date revision changes 23-sep-2013 1 first release. 28-nov-2013 2 ? modified: i d value in cover page ? modified: i d and i dm valued in figure 2 ? modified: r thj-case values ? modified: values in table 4 ? modified: dv/dt value in table 5 , i gss test condition ? modified: typical and i d values in table 5 ? modified: i sd , typical and max values in table 7 ? updated: figure 4 , 13 , 14 , 15 and 16 ? added: figure 17 ? minor text changes
docid025283 rev 1 23/23 STB26NM60ND, stf26nm60nd, stp26nm60nd, stw26nm60nd 23 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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